Physics & Applications of Semiconductor Devices - PHY00018M
- Department: Physics
- Credit value: 10 credits
- Credit level: M
- Academic year of delivery: 2022-23
Related modules
Additional information
Students wishing to take this module should have taken Statistical Mechanics & Solid State II - PHY00049H or (NS) Solid State II - PHY00060H
Module will run
| Occurrence | Teaching period |
|---|---|
| A | Autumn Term 2022-23 |
Module aims
Based on the models developed in Quantum Mechanics, Statistical Mechanics as well as in Solid State Physics (Introduction to Solid State Physics and Electrons in Solids), this course discusses the links between our fundamental understanding of electronic states in materials and the application of this understanding in micro- and optoelectronics as well as detector-physics. It will cover and revisit vital concepts such as crystal symmetries and defects, band structures, phonon dispersion, the interaction of charge carriers with external fields and the effect on the electronic and optical properties. Experimental techniques to synthesize semiconductors and to study their physical properties will be discussed for some of the most prominent semiconductor materials such as Si, GaAs, GaN and Ge.
A large part of this course will focus on the application of these concepts and techniques for well-established and novel devices such as transistors, metal oxide semiconductor field effect transistors (MOSFETs), light emitting diodes/laser diodes and particle detectors.
Module learning outcomes
This module covers the fundamental concepts relevant for the understanding of the physical properties of semiconducting materials, their fabrication, their characterisation, and their assembly into technological devices. The skills obtained throughout this course are of great importance in society and economy, which are both increasingly driven by the application of electronics in all walks of life.
At the end of this course the students will be able to:
describe the relevance of the crystal structure and atomic bonds for the fundamental electronic properties
explain the main techniques for the structural characterisation of semiconductors (electron microscopy, spectroscopic techniques, X-ray diffraction)
apply the band structure model and effective mass concept to determine band gap width and mobility of charge carriers
identify the important transport and scattering processes at work in semiconductors (drift, diffusion, generation, recombination, thermionic emission, tunnelling and ionisation)
calculate the temperature dependence of the ionisation of dopant states and charge carrier concentrations
distinguish the relevant electron-hole recombination processes and the role of majority and minority charge carrier for these processes
quantitatively describe the experimental determination of the charge carrier concentrations and transport properties of semiconductors (e.g. Hall resistance and Haynes-Shockley experiment)
describe the impact of defects on these properties
explain the main techniques for the fabrication of semiconducting materials and their limitations
understand the physics of p-n junctions (charge densities, potential distribution, charge carrier transport processes) and their relevance for their application in electronic devices
correlate the theoretical description of p-n junctions with experimental techniques to determine their physical properties
distinguish the main building blocks for the semiconductor based devices discussed in this course
describe the underlying principles of microelectronic, optoelectronic and detector devices.
These skills are greatly important for students who plan to work either theoretically or experimentally on microelectronics based techniques in the future.
Module content
Syllabus
Physics of Semiconductors
o Lattice properties (elastic properties, phonon dispersion)
o Electronic band structure and densities of states in semiconductors
o Fundamental electronic transport properties of semiconductors
o Interaction of semiconductors with radiation
o Structural defects (point, line, planar and volume defects) and their impact on the transport properties
Characterization of semiconductors
o Electronic properties: Four probe measurements, I-V characterisation
o Structural and chemical characterisation: X-ray diffraction and spectroscopy, electron microscopy
Applications
o Microelectronic devices (bipolar transistors and MOSFETs)
o Detectors (CCDs, X-ray detectors)
o Solar cells
o Optoelectronic devices (diodes, lasers)
Indicative assessment
| Task | % of module mark |
|---|---|
| Online Exam - 24 hrs (Centrally scheduled) | 100 |
Special assessment rules
None
Indicative reassessment
| Task | % of module mark |
|---|---|
| Online Exam - 24 hrs (Centrally scheduled) | 100 |
Module feedback
Our policy on how you receive feedback for formative and summative purposes is contained in our Department Handbook.
Indicative reading
Simon. M. Sze: "Semiconductor Devices: Physics and Technology", Wiley